±³À°°úÇбâ¼úºÎ ±Û·Î¹úÇÁ·ÐƼ¾î (Àç)¸ÖƼ½ºÄÉÀÏ ¿¡³ÊÁö ½Ã½ºÅÛ ¿¬±¸´Ü (´ÜÀå: ÃÖ¸¸¼ö ±³¼ö) Àº ³ª³ë±â¼ú°ú ¿¡³ÊÁö ±â¼úÀÇ À¶ÇÕÀ» ÅëÇÏ¿© Çõ½ÅÀû ¹Ì·¡ ±¤¿¡³ÊÁö¿Í ºÐÀÚ¿¡³ÊÁö ¿øõ±â¼ú °³¹ßÀ» ¸ñÇ¥·Î ÇÏ´Â ¸ÖƼ½ºÄÉÀÏ ¿¡³ÊÁö ½Ã½ºÅÛ ¿¬±¸»ç¾÷À» ÃßÁøÇÏ°í ÀÖ½À´Ï´Ù. ¿¬±¸´Ü¿¡¼´Â °ÝÁÖ·Î ¸ÖƼ½ºÄÉÀÏ ¿¡³ÊÁö °Á¸¦ °³ÃÖÇÕ´Ï´Ù. °ü½É ÀÖ´Â ºÐµéÀÇ ¸¹Àº Âü¼® ¹Ù¶ø´Ï´Ù.
1.Á¦ ¸ñ : Low Temperature, Solution-Processed and Alkali metal doped ZnO for High Performance Thin Film Transistors
2.¿¬ »ç : ±è¿¬»ó ±³¼ö´Ô (¼¿ï´ëÇб³ À¶ÇÕ°úÇбâ¼ú´ëÇпø)
3.ÀÏ ½Ã : 2012³â 3¿ù 5ÀÏ (¿ù) 16:00 ~ 17:00
4.Àå ¼Ò : ½Å°øÇаü(301µ¿) 117È£ ¼¼¹Ì³ª½Ç
5.³» ¿ë : Abstract : In this presentation, I will introduce the alkali metals can effectively and practically n-type-dope ZnO semiconductor in TFTs. Also, unique to the approach is the use of zinc ammonia in the ZnO TFTs fabrication. This method allows the successful fabrication of the carbon-free ZnO thin films as active layer of TFT at maximum process temperature as low as 300°C. In addition, these alkal metal doped ZnO TFTs also showed the excellent electrical stability in repeating operation. As alkali metal doping of ZnO can offer successfully the various needs in next-generation high-performance TFTs for plastic electronics such as low-cost, low-temperature fabrication, solution-processability, and electrical stability and so on, I believe that it could be adapted to the driving TFTs for the flexible, printing and transparent electronics.
6. ¾à ·Â :
2011- Associate Professor, Department of Nano Science & Technology, SNU
2009– 2011 Assistant Professor, Department of Nano Science & Technology, SNU
2004–2009 Assistant Professor, Department of Chemistry & Nano Science, Ewha Womans University
2002–2004 Post Doctoral Associate, Massachusetts Institute of Technology
2002: D. Sci. Seoul National University
1997: M. Sci. Seoul National University
1995: B. Sci. Seoul National University
7. ¹® ÀÇ : ¸ÖƼ½ºÄÉÀÏ ¿¡³ÊÁö ½Ã½ºÅÛ ¿¬±¸´Ü ¿¬±¸Áö¿øº»ºÎ (¢Î 889-6669,6670)
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