1) ¿ø¸® ¹× ±â´É
Thermal energy¶Ç´Â plasma¸¦ ÀÌ¿ëÇÏ¿© µÎ °¡Áö ÀÌ»óÀÇ precursor¸¦ ¼øÂ÷ÀûÀ¸·Î ±âÆÇ À§¿¡ µµÆ÷/¹ÝÀÀÇÏ¿© ¿øÀÚÃþÀ¸·Î ¹Ú¸·À» Çü¼ºÇÔ.
2) ±â±âÈ°¿ë
- Metal oxide ÁõÂø (ÇöÀç Al2O3¸¸ ÁõÂø °¡´É)
- Conformal ÇÏ°Ô Çʸ§À» µµÆ÷ÇÏ°íÀÚ ÇÒ ¶§ ¿ëÀÌ
- ÀüÀÚ¼ÒÀÚ¿¡barrier layer¸¦ µµÆ÷ÇÏ°íÀÚ ÇÒ ¶§ ¿ëÀÌ
3) »ç¾ç
- Substrate Size :6” Standard (Wafer)
- Thermal ALD Process (Plasma Process Available)
- Gap Adjustable between Showerhead and Substrate
- Gas Delivery System : Bubbler, LDS etc.
- Max Temperature : 500 ¡É (@ Wafer)
- No. of Precursor Canisters : Up to 4 Sets (Standard)
- Pressure Control : Automatic Control by Throttle Valve
- Process Gauge : CDG Gauge (10 Torr)
- Process Pump : Dry Pump (Rotary Pump Available)
- Pumping Line Hot Trap to Reduce Particle
4) Àåºñȸ»ç ȨÆäÀÌÁö
http://www.cn-1.co.kr/index.php
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